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Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
GENERAL DESCRIPTION
Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies with 3 V - 3.3 V outputs, or as or-ing diodes in fault tolerant power supply systems.
PBYR2525CT series
QUICK REFERENCE DATA
SYMBOL VRRM VF IO(AV) PARAMETER PBYR25Repetitive peak reverse voltage Forward voltage Average output current (both diodes conducting) MAX. 20CT 20 0.41 30 MAX. 25CT 25 0.41 30 UNIT V V A
PINNING - TO220AB
PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a1 1 k2
1 23
a2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -20 20 20 20 30 43 30 180 200 MAX. -25 25 25 25 UNIT V V V A A A A A
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb 109 C Average output current (both diodes conducting) RMS output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode square wave; = 0.5; Tmb 135 C
I2t IRRM IRSM Tstg Tj
t = 25 s; = 0.5; Tmb 135 C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 C prior to surge; with reapplied VRRM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 s; = 0.001 per diode Non-repetitive peak reverse tp = 100 s current per diode Storage temperature Operating junction temperature
-65 -
162 2 2 175 150
A2s A A C C
January 1997
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes in free air
PBYR2525CT series
MIN. -
TYP. 60
MAX. 1.5 1.0 -
UNIT K/W K/W K/W
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL VF IR Cd PARAMETER Forward voltage (per diode) Reverse current (per diode) Junction capacitance (per diode) CONDITIONS IF = 15 A; Tj = 125C IF = 30 A; Tj = 125C IF = 30 A VR = VRRM VR = VRRM; Tj = 100 C f = 1MHz; VR = 5V; Tj = 25 C to 125 C MIN. TYP. 0.33 0.43 0.51 2.0 30 900 MAX. 0.41 0.50 0.60 10 80 UNIT V V V mA mA pF
January 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
PBYR2525CT series
12 10 8 6 4 2
PF / W Vo = 0.27 V Rs = 0.00875 Ohms
PBYR1625
Tmb(max) / C D = 1.0 0.5
132 135 138 141
10000
Cd / pF
PBYR1625
0.1
0.2
1000
I
tp
D=
tp T t
144 147
T
0
0
5
10 15 IF(AV) / A
20
150 25
100
1
10 VR / V
100
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
PBYR1625
Fig.4. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25C to 125 C.
50
IF / A Tj = 25 C Tj = 125 C
Zth j-mb (K/W) 10
40 typ 30 max
1
20
0.1
10
P D
tp
t
0 0 0.2 0.4 VF / V 0.6 0.8 1
0.01 10us 1ms tp / s 0.1s 10s
Fig.2. Typical and maximum forward characteristic IF = f(VF); parameter Tj
PBYR1625
Fig.5. Transient thermal impedance per diode; Zth j-mb = f(tp).
1A 100mA
IR / A 150 C 125 C
10mA 100 C 1mA 100uA Tj = 25 C 10uA 1uA 0 75 C 50 C
5
10 VR / V
15
20
25
Fig.3. Typical reverse leakage current per diode; IR = f(VR); parameter Tj
January 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
PBYR2525CT series
4,5 max 10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,9 max (3x)
0,6 2,4
Fig.6. TO220AB; pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".
January 1997
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PBYR2525CT series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
January 1997
5
Rev 1.000

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